savantic semiconductor product specification silicon npn power transistors 2SD1506 d escription with to-126 package complement to type 2sb1065 low collector saturation voltage applications for use in low frequency power amplifier applications pinning pin description 1 emitter 2 collector;connected to mounting base 3 base absolute maximum ratings(ta=25 ) symbol parameter conditions value unit v cbo collector-base voltage open emitter 60 v v ceo collector-emitter voltage open base 50 v v ebo emitter-base voltage open collector 5 v i c collector current 3 a i cm collector current-peak 4.5 a t c =25 10 p c collector power dissipation t a =25 1.2 w t j junction temperature 150 t stg storage temperature -55~150
savantic semiconductor product specification 2 silicon npn power transistors 2SD1506 characteristics tj=25 unless otherwise specified symbol parameter conditions min typ. max unit v (br)ceo collector-emitter breakdown voltage i c =1ma ,i b =0 50 v v (br)cbo collector-base breakdown voltage i c =50a ,i e =0 60 v v (br)ebo emitter- base breakdown voltage i e =50a ,i c =0 5 v v cesat collector-emitter saturation voltage i c =2a; i b =0.2a 1.0 v v besat base-emitter saturation voltage i c =2a; i b =0.2a 1.5 v i cbo collector cut-off current v cb =40v; i e =0 1.0 a i ebo emitter cut-off current v eb =4v; i c =0 1.0 a h fe dc current gain i c =0.5a ; v ce =3v 56 390 c ob output capacitance i e =0 ; v cb =10v,f=1mhz 40 pf f t transition frequency i c =0.5a ; v ce =5v 90 mhz h fe classifications n p q r 56-120 82-180 120-270 180-390
savantic semiconductor product specification 3 silicon npn power transistors 2SD1506 package outline fig.2 outline dimensions
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